X-band epi-BAW resonators
نویسندگان
چکیده
Using epitaxial aluminum nitride (AlN) developed for ultraviolet photonics and high-speed electronics, we demonstrate suspended AlN thin-film bulk acoustic resonators (FBARs) at 9.2 GHz in the X-band (8–12 GHz) of microwave spectrum. The show a Qmax≈614 figure merit f⋅Q≈5.6 THz. material stack these epi-AlN FBARs allows monolithic integration with AlN/GaN/AlN quantum well high-electron-mobility-transistors to unique RF front end also enable superconductors filters computing.
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2022
ISSN: ['1089-7550', '0021-8979', '1520-8850']
DOI: https://doi.org/10.1063/5.0097458